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datasheet, v 1.1, july 2007 BTS5236-2GS smart high-side power switch profet two channels, 50 m ? automotive power
smart high-side power switch BTS5236-2GS datasheet 2 v 1.1, 2007-09-07 table of contents page 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 pin assignment bts5236-2 gs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 block description and el ectrical characteristics . . . . . . . . . . . . . . . . . . . . . . 10 4.1 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.1 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.3 inductive output clam p . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.4 electrical characterist ics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.1 over load protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.2 reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.3 over voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.4 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.5 electrical characterist ics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.3.1 on-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3.2 off-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.3 sense enable function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.3.4 electrical characterist ics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5 package outlines BTS5236-2GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
datasheet 3 v 1.1, 2007-09-07 type package marking BTS5236-2GS pg-dso-14-32 BTS5236-2GS smart high-side power switch profet BTS5236-2GS product summary the BTS5236-2GS is a dual channel high-side power switch in pg-dso-14- 32 package providing embedded protective functions. the power transistor is built by a n-channel vertical power mosfet with charge pump. the device is monolithically integrated in smart sipmos technology. basic features ? green product (rohs compliant) ? very low standby current ? 3.3 v and 5 v compatible logic pins ? improved electromagnetic compatibility (emc) ? stable behavior at under voltage ? logic ground independen t from load ground ? secure load turn-off while logic ground disconnected ? optimized inverse current capability ? aec qualified operating voltage v bb(on) 4.5 ? 28 v over voltage protection v bb(az) 41 v on-state resistance r ds(on) 50 m ? nominal load current (o ne channel active) i l(nom) 3.2 a current limitation i l(lim) 23 a current limitation repetitive i l(scr) 6a standby current for w hole device with load i bb(off) 2.5 a pg-dso-14-32
smart high-side power switch BTS5236-2GS datasheet 4 v 1.1, 2007-09-07 protective functions ? reverse battery protection without exter nal components ? short circuit protection ? overload protection ? multi-step current limitation ? thermal shutdown with restart ? thermal restart at redu ced current limitation ? over voltage protection wi thout external resistor ? loss of ground protection ? electrostatic discharge protection (esd) diagnostic functions ? enhanced intellisense si gnal for each channel ? enable function for diagnosis pins (is1and is2) ? proportional load current sense signal by current source ? high accuracy of current sense sign al at wide load current range ? open load detection in on-sta te by load current sense ? over load (current limitati on) diagnosis in on-state, si gnalling by voltage source ? latched over temperature diagnosis in on-state, signalling by voltage source ? open load detection in off-state, signalling by voltage source applications ? c compatible high-side power switch with diagnostic feedback for 12 v grounded loads ? suitable for automotive a nd industrial applications ? all types of resistive, in ductive and capacitive loads ? suitable for loads with high in rush currents, such as lamps ? suitable for loads with lo w currents, such as leds ? replaces electromechanical rela ys, fuses and discrete circuits
smart high-side power switch BTS5236-2GS overview datasheet 5 v 1.1, 2007-09-07 1overview the BTS5236-2GS is a dual channel high-side power switch (two times 50m ? ) in pg-dso-14-32 package pr oviding embedded pr otective functions. the enhanced intellisense pins is1 and is2 provide a sophist icated diagnostic feedback signal including current sense function, over load and over temperature alerts in on- state and open load alert in off-state. the diagnosis sig nals can be switched on and off by the sense enable pin sen. an integrated ground resistor as well as inte grated resistors at each input pin (in1, in2, sen) reduce external co mponents to a minimum. the power transistor is buil t by a n-channel vertical po wer mosfet with charge pump. the inputs are ground refe renced cmos compatible. th e device is monolithically integrated in smart sipmos technology. 1.1 block diagram figure 1 block diagram channel 1 internal power supply esd pr otection out2 channel 2 control and protection circuit equivalent to channel 1 in1 is1 sen gnd r gnd is2 in2 open load detection logic gate control & charge pump vbb out1 clamp for inductive load multi step load current limitation load current sense over load detection tem per atur e sensor
smart high-side power switch BTS5236-2GS overview datasheet 6 v 1.1, 2007-09-07 1.2 terms following figure shows all te rms used in this datasheet. figure 2 terms in all tables of electrical characteristics is valid: channel related symbols without channel number are valid for eac h channel separately. terms2ch.emf i in1 v in1 out1 i in2 v in2 v is1 i is1 v is2 i is2 v bb v sen i sen i l1 v out2 v out1 v ds2 v ds1 i l2 gnd i gnd i bb in1 in2 is1 is2 sen vbb out2 BTS5236-2GS
smart high-side power switch BTS5236-2GS pin configuration datasheet 7 v 1.1, 2007-09-07 2 pin configuration 2.1 pin assignment BTS5236-2GS figure 3 pin configuration pg-dso-14-32 2.2 pin definitions and functions pin symbol i/o function 2 in1 i input signal for channel 1 6 in2 i input signal for channel 2 3 is1 o diagnosis output signal channel 1 5 is2 o diagnosis output signal channel 2 7 sen i sense enable in put for channel 1&2 12, 13 out1 1) 1) all output pins of each channel have to be connected o protected high-side pow er output channel 1 9, 10 out2 1) o protected high-side pow er output channel 2 1 gnd ? ground connection 4, 8, 11, 14 vbb 2) 2) all vbb pins have to be connected ? positive power supply for logic supply as well as output power supply (top vi ew) out1 out1 vbb 14 13 12 11 10 9 gnd in1 is1 is2 vbb in2 1 2 3 4 5 6 vbb sen 78 out2 out2 vbb
smart high-side power switch BTS5236-2GS electrical characteristics datasheet 8 v 1.1, 2007-09-07 3 electrical characteristics 3.1 maximum ratings stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. unless otherwise specified: t j = 25 c pos. parameter symbol limit values unit test conditions min. max. supply voltage 3.1.1 supply voltage v bb -16 28 v 3.1.2 supply voltag e for full short circuit protection (single pulse) ( t j(0) = -40 c .. 150 c) v bb(sc) 028v l = 8 h, r = 0.2 ? 1) 3.1.3 voltage at power transistor v ds 52 v 3.1.4 supply voltag e for load dump protection v bb(ld) 41 v r i = 2 ? 2) r l = 6.8 ? power stages 3.1.5 load current i l i l(lim) a 3) 3.1.6 maximum energy dissipation single pulse e as 110 mj v bb = 13.5v i l (0) = 2 a 4) t j (0) = 150 c 3.1.7 power dissipation (dc) p tot 1.1 w t a = 85 c 5) t j 150 c logic pins 3.1.8 voltage at input pin v in -5 -16 10 v t 2min 3.1.9 current through input pin i in -2.0 -8.0 2.0 ma t 2min 3.1.10 voltage at sense enable pin v sen -5 -16 10 v t 2min 3.1.11 current through sense enable pin i sen -2.0 -8.0 2.0 ma t 2min 3.1.12 current through sense pin i is -25 10 ma
smart high-side power switch BTS5236-2GS electrical characteristics datasheet 9 v 1.1, 2007-09-07 temperatures 3.1.13 junction temperature t j -40 150 c 3.1.14 dynamic temperature increase while switching ? t j -60 c 3.1.15 storage temperature t stg -55 150 c esd susceptibility 3.1.16 esd susceptibility hbm in, sen is out v esd -1 -2 -4 1 2 4 kv according to eia/jesd 22-a 114b 1) r and l describe the complete circuit impedance including line, contact and generator impedances. 2) load dump is specified in iso 7637, r i is the internal resistance of the load dump pulse generator. 3) current limitation is a protection feature. operation in current limitatio n is considered as ?outside? normal operating range. protection feat ures are not designed for cont inuous repetitive operation. 4) pulse shape represents inductive switch off: i l (t) = i l (0) * (1 - t / t pulse ); 0 < t < t pulse . 5) device mounted on pcb (50 mm 50 mm 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. unless otherwise specified: t j = 25 c pos. parameter symbol limit values unit test conditions min. max.
smart high-side power switch BTS5236-2GS block description and el ectrical characteristics datasheet 10 v 1.1, 2007-09-07 4 block description and electrical characteristics 4.1 power stages the power stages are built by n-channel ve rtical power mosfets (dmos) with charge pumps. 4.1.1 output on-state resistance the on-state resistance r ds(on) depends on the supply volt age as well as the junction temperature t j . figure 4 shows that dependenc ies for the typical on-state resistance. the behavior in reverse pol arity mode is described in section 4.2.2 . figure 4 typical on-state resistance 4.1.2 input circuit figure 5 shows the input circuit of the bts5 236-2gs. there is an integrated input resistor that makes external components obsolete. the cu rrent sink to ground ensures that the device switches off in case of open inpu t pin. the zener diod e protects the input circuit against esd pulses. figure 5 input circ uit (in1 and in2) 40 50 60 70 80 90 4,5 7 9,5 12 14,5 17 19,5 22 24,5 27 29,5 32 34,5 37 39,5 v bb / v r ds(on) / m ? 30 40 50 60 70 80 90 -45 -25 -5 15 35 55 75 95 115 135 155 t / c r ds(on) / m ? v bb = 13.5 v t j = 25 c in r in i in gnd r gnd i nput . emf
smart high-side power switch BTS5236-2GS block description and el ectrical characteristics datasheet 11 v 1.1, 2007-09-07 a high signal at the input pi n causes the power dmos to switch on with a dedicated slope, which is optimized in terms of emc emission. figure 6 switching a load (resistive) 4.1.3 inductive output clamp when switching off inductive loads wi th high-side switches, the voltage v out drops below ground potential, because th e inductance intends to cont inue driving the current. figure 7 output clamp (out1 and out2) to prevent destruction of th e device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level ( v out(cl) ). see figure 7 and figure 8 for details. neverthele ss, the maximum allowed lo ad inductance is limited. in v out t switchon.emf t on t off t 90% 10% 70% d v /d t on 30% 70% d v /d t off 30% out put clamp. emf out gnd v bb vbb l , r l v out i l
smart high-side power switch BTS5236-2GS block description and el ectrical characteristics datasheet 12 v 1.1, 2007-09-07 figure 8 switching an inductance maximum load inductance while demagnetizati on of inductive loads, energy has to be dissi pated in the bts5236- 2gs. this energy can be calc ulated with foll owing equation: (1) this equation simplifies under the assumption of r l = 0: (2) the energy, which is converted into heat, is limited by the th ermal design of the component. see figure 9 for the maximum allo wed energy dissipation. figure 9 maximum energy di ssipation single pulse, t j,start = 150 c v out i nduct iveload. emf t i l t v out(cl) v bb in = 5v in = 0v 0 ev bb v out(cl) ? () v out(cl) r l ---------------------- - ln ? 1 r l i l ? v out(cl) ---------------------- - ? ?? ?? ?? i l + l r l ------ ?? = e 1 2 -- - li l 2 1 v bb v out(cl) ---------------------- - ? ?? ?? ?? ? = 0 50 100 150 200 250 300 123456 i / a eas / mj v bb = 13.5 v
smart high-side power switch BTS5236-2GS block description and el ectrical characteristics datasheet 13 v 1.1, 2007-09-07 4.1.4 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. general 4.1.1 operating voltage v bb 4.5 28 v v in = 4.5 v r l = 12 ? v ds < 0.5 v 4.1.2 operating current one channel active all channels active i gnd 1.8 3.6 4.0 8.0 ma v in = 5 v 4.1.3 standby current for whole device with load i bb(off) 1.5 2.5 2.5 15 a v in = 0 v v sen = 0 v t j = 25 c t j = 85 c 1) t j = 150 c output characteristics 4.1.4 on-state resistance per channel r ds(on) 40 80 100 m ? i l = 2.5 a t j = 25 c 1) t j = 150 c 4.1.5 output voltage drop limitation at small load currents v ds(nl) 40 mv i l < 0.25 a 4.1.6 nominal load current per channel one channel active channels active i l(nom) 3.2 2.3 a t a = 85 c t j 150 c 2) 3) 4.1.7 output clamp v out(cl) -24 -20 -17 v i l = 40 ma 4.1.8 output leakage current per channel i l(off) 0.1 6.0 a v in = 0 v 4.1.9 inverse current capability - i l(inv) -3-a 1)
smart high-side power switch BTS5236-2GS block description and el ectrical characteristics datasheet 14 v 1.1, 2007-09-07 note: characteristics show th e deviation of parameter at the given supply voltage and junction temperature. typical values s how the typical parameters expected from manufacturing. thermal resistance 4.1.10 junction to case r thjc 45 k/w 1) 4.1.11 junction to ambient one channel active all channels active r thja 67 62 k/w 1) 2) input characteristics 4.1.12 input resistor r in 1.8 3.5 5.5 k ? 4.1.13 l-input level v in(l) -0.3 - 1.0 v 4.1.14 h-input level v in(h) 2.5 - 5.7 v 4.1.15 l-input current i in(l) 31875 a v in = 0.4 v 4.1.16 h-input current i in(h) 10 38 75 a v in = 5 v timings 4.1.17 turn-on time to 90% v out t on - 100 250 s r l = 12 ? v bb = 13.5 v 4.1.18 turn-off time to 10% v out t off - 120 250 s r l = 12 ? v bb = 13.5 v 4.1.19 slew rate 30% to 70% v out d v / d t on 0.1 0.25 0.5 v/ s r l = 12 ? v bb = 13.5 v 4.1.20 slew rate 70% to 30% v out -d v / d t off 0.1 0.25 0.5 v/ s r l = 12 ? v bb = 13.5 v 1) not subject to production test, specified by design. 2) device mounted on pcb (50 mm 50 mm 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. 3) not subject to production test, parameters are calculated from r ds(on) and r th . unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch BTS5236-2GS datasheet 15 v 1.1, 2007-09-07 4.2 protection functions the device provides embedded protective func tions. integrated prot ection functions are designed to prevent ic destru ction under fault co nditions described in the data sheet. fault conditions are consi dered as ?outside? normal op erating range. protection functions are neither de signed for continuous no r repetitive operation. 4.2.1 over load protection the load current i out is limited by the device itself in case of over load or short circuit to ground. there are three steps of current li mitation which are se lected automatically depending on the voltage v ds across the power dmos. please note that the voltage at the out pin is v bb - v ds . please refer to follow ing figure for details. figure 10 current limita tion (minimum values) current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. a temperat ure sensor for each channel causes an overheated channel to switch off to prevent destruction. after cool ing down with thermal hysteresis, the channel switches on again. please refer to figure 11 for details. figure 11 shut down by over te mperature with current limitation in short circuit condition, the load current is initially limited to i l(lim) . after thermal restart, the current limitation level is reduced to i l(scr) . the current limitation level is reset to i l(lim) by switching off the device ( v in = 0 v). current limit at ion. emf i l 5 101520 5 10 15 20 25 v ds 25 in i l i is t i l(lim) i l(scr) t t overload . emf t off(sc)
smart high-side power switch BTS5236-2GS datasheet 16 v 1.1, 2007-09-07 4.2.2 reverse polarity protection in case of reverse polarity, the intrinsic body di ode causes power di ssipation. additional power is dissipated by the integrated gr ound resistor. use fo llowing formula for estimation of total power dissipation p diss(rev) in reverse polarity mode. (3) the reverse current through th e intrinsic body diode has to be limited by the connected load. the current through sens e pins is1 and is2 has to be limited (please refer to maximum ratings on page 8 ). the current through the ground pin (gnd) is limited internally by r gnd . the over-temperature protection is not active during reverse polarity. 4.2.3 over voltage protection in addition to th e output clamp for inductiv e loads as described in section 4.1.3 , there is a clamp mechanism for over voltage protec tion. because of th e integrated ground resistor, over voltage protection do es not require external components. as shown in figure 12 , in case of supply voltages greater than v bb(az) , the power transistor switches on and th e voltage across logic part is clamped. as a result, the internal ground po tential rises to v bb - v bb(az) . due to the esd zener diodes, the potential at pin in1, in2 and sen rises almost to that po tential, depending on the impedance of the connected circuitry. figure 12 over voltage protection 4.2.4 loss of ground protection in case of complete loss of the device gr ound connections, but connected load ground, the BTS5236-2GS securely change s to or stays in off state. p diss(rev) v ds(rev) i l ? () all channels v bb 2 r gnd -------------- + = out vbb overvolt age . emf v out r gnd logic gnd in is sen r sen r in zd esd zd az internal ground
smart high-side power switch BTS5236-2GS datasheet 17 v 1.1, 2007-09-07 4.2.5 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c , typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. over load protection 4.2.1 load current limitation i l (lim) 23 42 a v ds = 7 v 14 28 a v ds = 14 v 314a v ds = 28 v 1) 2) 1) please note that an external forced v ds must not exceed v bb + | v out(cl) | 4.2.2 repetitive short circuit current limitation i l(scr) -6-a t j = t j(sc) 2) 2) not subject to production test, specified by design 4.2.3 initial short circuit shut down time t off(sc) -0.5-ms t jstart = 25 c 2) 4.2.4 thermal shut down temperature t j(sc) 150 170 2) - c 4.2.5 thermal hysteresis ? t j -7-k 2) reverse battery 4.2.6 drain-source diode voltage ( v out > v bb ) -v ds(rev) --900mv i l = -3.5 a v bb = -13.5 v t j = 150 c 4.2.7 reverse current through gnd pin - i gnd -65-ma v bb = -13.5 v 2) ground circuit 4.2.8 integrated resistor in gnd line r gnd 115 220 350 ? over voltage 4.2.9 over voltage protection v bb(az) 41 47 53 v i bb = 2 ma loss of gnd 4.2.10 output leakage current while gnd disconnected i l(gnd) --1ma i in = 0, i sen = 0 , i is = 0, i gnd = 0 2) 3) 3) no connection at these pins
smart high-side power switch BTS5236-2GS datasheet 18 v 1.1, 2007-09-07 4.3 diagnosis for diagnosis purpose, the bt s5236-2gs provides an enhanced intellisense signal at pins is1 and is2. this means in detail, the current sense signal i is , a proportional signal to the load current (ratio k ilis = i l / i is ), is provided as long as no failure mode (see table 1 ) occurs. in case of a failure mode, the voltage v is(fault) is fed to the diagnosis pin. figure 13 block diagram: diagnosis table 1 truth table 1) operation mode input level output level diagnostic output sen = h sen = l normal operation (off) l gnd z z short circuit to gnd gnd z z over temperature z z z short circuit to v bb v bb v is = v is(fault) z open load < v out(ol) > v out(ol) z v is = v is(fault) z z channel 1 channel 2 i is2 out2 i is1 out1 is1 c in1 v out(ol) 0 1 v is( fa u lt) r in1 gate control in2 is2 diagnosis gnd r ol s ol load vbb sense. emf r is1 r is2 r lim r lim over temperature over load gate control r in2 open load @ off sen 0 1 r sen 0 1 latch
smart high-side power switch BTS5236-2GS datasheet 19 v 1.1, 2007-09-07 4.3.1 on-state diagnosis the standard diagnosis si gnal is a current sens e signal proportional to the load current. the accuracy of the ratio ( k ilis = i l / i is ) depends on the temperat ure. please refer to following figure 14 for details. usually a resistor r is is connected to the current sense pin. it is recommended to use sense resistors r is > 500 ?. a typical value is 4.7 k ? . figure 14 curren t sense ratio k ilis 1) normal operation (on) h ~ v bb i is = i l / k ilis z current limitation < v bb v is = v is(fault) z short circuit to gnd ~gnd v is = v is(fault) z over temperature z v is = v is(fault) z short circuit to v bb v bb i is < i l / k ilis z open load v bb zz 1) l = low level, h = high level, z = high impedance, pot ential depends on leakage currents and external circuit 1) the curves show the behavior based on characteriza tion data. the marked points are guaranteed in this datasheet in section 4.3.4 (position 4.3.6 ). table 1 truth table 1) (cont?d) operation mode input level output level diagnostic output sen = h sen = l 1000 2000 3000 4000 5000 6000 7000 8000 0 0.5 1 1.5 2 2.5 3 3.5 4 k ilis i l /a dummy t j = 150 c dummy t j = -40 c
smart high-side power switch BTS5236-2GS datasheet 20 v 1.1, 2007-09-07 details about timings betw een the diag nosis signal i is and the output voltage v out and load current i l in on-state can be found in figure 15 . figure 15 timing of dia gnosis signal in on-state in case of over-load as well as over-temperature, the voltage v is(fault) is fed to the diagnosis pins as long as the according input pin is hi gh. this means, even if the overload disappears after the first thermal shutdown or when the de vice keeps switching on and off in over-load condition (t hermal toggling), the diagnosis signal( v is(fault) ) is constantly available. please refer to figure 16 for details. please note, that if the overload disapears before the first thermal shut down, the diagnos is signal ( v is(fault) ) may remain for approximately 300 s longer than the dura tion of the overload. as a result open load and over load including over temperature can be differentiated in on-state. consideration must be taken in the selection of the sense resi stor in order to distinguish nominal currents from the overload/short circuit fault state. a potential of 5 v at the sense pin can be achieved with a bi g sense resistor even with cu rrents being much smaller than the current limitation. switchon .emf in v out i is t t t i l t on t on t sis( o n) t sis( l c) off normal operation over load (current limitation) t sis( o vl ) v is(fault) / r s
smart high-side power switch BTS5236-2GS datasheet 21 v 1.1, 2007-09-07 figure 16 timing of diagnosis signal in over load condition 4.3.2 off-state diagnosis details about timings betw een the diag nosis signal i is and the output voltage v out and load current i l in off-state can be found in figure 17 . for open load diagnosis in off- state an external output pull-up resistor ( r ol ) is necessary. figure 17 timing of diagnos is signal in off-state for calculation of the pul l-up resistor, just the external leakage current i leakage and the open load thre shold voltage v out(ol) has to be taken into account. (4) i leakage defines the leak age current in the complete syst em e.g. caused by humidity. there is no internal le akage current from out to ground at BTS5236-2GS. v bb(min) is the minimum supply voltage at which the open load diagnosis in off st ate must be ensured. to reduce the stand-by cu rrent of the system , an open load resistor switch ( s ol ) is recommended. overload. emf in i is t t i l on t sis( o vl ) off v is( fa u lt) / r s over temperature over load (current limitation) off i l(lim) switchoff.emf in v out i is t t t open load, pull-up resistor active v is( fa u lt) / r s on off t d(fault) t s(fault) pull-up resistor inactive r ol v bb(min) v out(ol,max) ? i leakage ----------------------------------------------------------- =
smart high-side power switch BTS5236-2GS datasheet 22 v 1.1, 2007-09-07 4.3.3 sense enable function the diagnosis signals have to be switched on by a high signal at sense enable pin (sen). see figure 18 for details on the timing betw een sen pin and diagnosis signal i is . please note that the diagnosis is disabled, wh en no signal is provided at pin sen. figure 18 timing of sense enable signal the sen pin circuit is designed equally to the input pin. please refer to figure 5 for details. the resistors r lim are recommended to limit the current through the sense pins is1and is2 in case of reverse polarity and over voltage. plea se refer to maximum ratings on page 8 . the stand-by current of the BTS5236-2GS is minimized, wh en both input pins (in1 and in2) and the sense enable pi n (sen) are on low level. t d is( sen) t sis( sen) t sen.emf t sis( sen) t t d is( sen) i is sen
smart high-side power switch BTS5236-2GS datasheet 23 v 1.1, 2007-09-07 4.3.4 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. general definition 4.3.1 diagnostics signal in failure mode v is(fault) 5-9v v in = 0 v v out = v bb i is = 1 ma 4.3.2 diagnostics signal current limitation in failure mode i is(lim) 3- -ma v in = 0 v v out = v bb open load in off-state 4.3.3 open load detection threshold voltage v out(ol) 1.6 2.8 4.4 v 4.3.4 sense signal invalid after negative input slope t d(fault) --1.2ms v in = 5 v to 0 v v out = v bb 4.3.5 fault signal settling time t s(fault) --200 s v in = 0 v v out = 0 v to > v out(ol) i is = 1 ma load current sense on-state 4.3.6 current sense ratio k ilis v in = 5 v i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 t j = -40 c i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 t j = 150 c 4.3.7 current sense voltage limitation v is(lim) 5.0 6.2 7.5 v i is = 0.5 ma i l = 3.5 a 4.3.8 current sense leakage/offset current i is(lh) --3.5 a v in = 5 v i l = 0 a
smart high-side power switch BTS5236-2GS datasheet 24 v 1.1, 2007-09-07 4.3.9 current sense leakage, while diagnosis disabled i is(dis) --1 a v sen = 0 v i l = 3.5 a 4.3.10 current sense settling time to i is static 10% after positive input slope t sis(on) --350 s v in = 0 v to 5 v i l = 3.5 a 1) 4.3.11 current sense settling time to i is static 10% after change of load current t sis(lc) --50 s v in = 5 v i l = 3.5 a to 2.2 a 1) over load in on-state 4.3.12 over load detection current i l(ovl) 8- i l(lim) a v in = 5 v v is = v is(fault) 1) 4.3.13 sense signal settling time in overload condition t sis(ovl) --200 s v out = 2 v v in = 0 v to 5 v sense enable 4.3.14 input resistance r sen 1.8 3.5 5.5 k ? 4.3.15 l-input level v sen(l) -0.3 - 1.0 v 4.3.16 h-input level v sen(h) 2.5 - 5.7 v 4.3.17 l-input current i sen(l) 31875 a v sen = 0.4 v 4.3.18 h-input current i sen(h) 10 38 75 a v sen = 5 v 4.3.19 current sense settling time t sis(sen) -325 s v sen = 0 v to 5 v v in = 0 v v out > v out(ol) 4.3.20 current sense deactivation time t dis(sen) --25 s v sen = 5 v to 0 v i l = 3.5 a r s = 5 k ? 1) 1) not subject to production test, specified by design unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch BTS5236-2GS package outlines BTS5236-2GS datasheet 25 v 1.1, 2007-09-07 5 package outlines BTS5236-2GS figure 19 pg-dso-14-32 (plastic dual small outline package) green product to meet the world-wide requir ements for environmentally fr iendly products and to be compliant with government regu lations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suit able for pb-free soldering according to ipc/jedec j-std-020). ?.08 ?.2 does not include plastic or metal protrusion of 0.15 max. per side index marking -0.06 1.27 +0.1 0.41 c 0.1 -0.2 8.75 1 14 7 1) a m 0.2 8 a 0.1 min. (1.5) c 14x 6 1.75 max. 4 1) -0.2 0.33 ?.25 0.64 0.2 +0.05 -0.01 x 45? max. 8? 1) dimensions in mm you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products .
smart high-side power switch BTS5236-2GS revision history datasheet 26 2007-09-07 6 revision history version date changes v1.1 07-09-07 creation of the da ta sheet ? insertion of the eas curves ? insertion of the ron vs tem perature and battery voltage. ? adding the test vo ltage for eas (3.1.6) ? change in the parameter 4.3. 11 in the test condition
edition 2007-09-07 published by infineon technologies ag, 81726 mnchen, germany ? infineon technologies ag 7/9/07. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby discla ims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery te rms and conditions and pric es please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may c ontain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life supp ort devices or systems are intended to be implanted in the human body, or to support and/or maintain a nd sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. smart high-side power switch BTS5236-2GS datasheet 27 2007-09-07

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